DescriptionThe IRF540N (TO-220-3) MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in wide variety of applications. Features:Drain to source voltage Vds is 100VGate to source voltage is ±20VOn Resistance Rds(on) of 44mohm at Vgs of 10VPower dissipation Pd of 130W at 25°CContinuous drain current Id of 33A at Vgs 10V and 25°COperating junction temperature range from -55°C to 175°CApplications: Power Management, Industrial, Portable Devices, Consumer Electronics.Package Includes:1 x IRF540N (TO-220-3) MOSFET
